 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC609LC4 is ideal for: * Fixed Microwave * Test & Measurement Equipment * Radar & Sensors * Military & Space Features Excellent Gain Flatness: 0.4 dB High Gain: 20 dB Low Noise Figure: 3.5 dB Output IP3: +36.5 dBm 50 Ohm Matched & DC Blocked RF I/Os RoHS Compliant 4x4 mm SMT package Functional Diagram General Description The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance characteristics including 20 dB of small signal gain, 3.5 dB of noise figure and output IP3 of +36.5 dBm across the operating band. This 50 Ohm matched amplifier does not require any external matching components. The HMC609LC4 is compatible with high volume surface mount manufacturing techniques, and the RF I/Os are DC blocked for further ease of integration. Electrical Specifications, TA = +25 C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA [1] Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2) [1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA 18.5 17 Min. Typ. 2-4 20 0.015 3.5 17 15 21.5 23 36.5 170 220 0.02 5.5 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA 5 - 204 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 S21 S11 S22 Gain vs. Temperature 22 21 20 GAIN (dB) 19 18 17 16 15 +25C +85C -40C 5 LOW NOISE AMPLIFIERS - SMT 5 - 205 5 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 7 8 9 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -40C P1dB vs. Temperature 26 25 24 23 P1dB (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -40C Psat vs. Temperature 26 25 24 23 Psat (dBm) 22 21 20 19 18 17 16 2 2.2 2.5 2.7 3 3.2 3.5 3.7 4 FREQUENCY (GHz) +25C +85C -40C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Power Compression @ 3 GHz 25 Pout (dBm), GAIN (dB), PAE (%) Output IP3 vs. Temperature 40 39 20 OIP3 (dBm) 38 37 15 36 35 34 33 +25C +85C -40C 10 Pout Gain PAE 5 32 31 30 8 2 2.25 2.5 2.75 3 0 -10 -8 -6 -4 -2 0 2 4 6 3.25 3.5 3.75 4 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) +25C +85C -40C Reverse Isolation vs. Temperature 0 -5 -10 -15 ISOLATION (dB) -20 -25 -30 -35 -40 -45 -50 -55 -60 +25C +85C -40C 7 6 5 4 3 2 1 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) FREQUENCY (GHz) 5 - 206 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +6.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 16.7 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature 7 Vdc +15 dBm 175 C 1.1 W 60 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd Vdd (V) +5.5 +6.0 +6.5 Idd (mA) 160 170 180 5 LOW NOISE AMPLIFIERS - SMT 5 - 207 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz 5 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 5 - 8, 10 - 14, 18 - 20, 22, 24 Function N/C Description This pin may be connected to RF/DC ground. Performance will not be affected. Package bottom must also be connected to RF/DC ground This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. Interface Schematic 2, 4, 15, 17 GND 3 RFIN 9 Vgg Gate supply voltage for the amplifier. (External bypass capacitors are required.) 16 RFOUT This pin is AC coupled and matched to 50 Ohms from 2 - 4 GHz. 21, 23 Vdd1, Vdd2 Power Supply Voltage for the amplifier. (External bypass capacitors are required.) Application Circuit Component C1 - C3 C4 - C6 C7 - C9 Value 100 pF 1,000 pF 2.2 F 5 - 208 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC609LC4 v01.0807 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Evaluation PCB 5 LOW NOISE AMPLIFIERS - SMT List of Materials for Evaluation PCB 117510 Item J1 - J2 J3 - J7 C1 - C3 C4 - C6 C7 - C9 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum HMC609LC4 Amplifier 117515 Evaluation PCB, 10 mils [1] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 209 |
Price & Availability of HMC609LC4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |